Observation of dislocations in GaAs by (photo)-electrochemical method
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference3 articles.
1. Applications of Electrochemical Methods for Semiconductor Characterization: I . Highly Reproducible Carrier Concentration Profiling of VPE “Hi‐Lo”
2. A new defect‐revealing etchant for GaAs
3. The Detection of Structural Defects in GaAs by Electrochemical Etching
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3. An X‐ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures;physica status solidi (c);2005-03
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