A new defect‐revealing etchant for GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324291
Reference7 articles.
1. Degradation of CW GaAs double-heterojunction lasers at 300 K
2. Defect structure introduced during operation of heterojunction GaAs lasers
3. A review of etching and defect characterisation of gallium arsenide substrate material
4. Evaluation of a New Polish for Gallium Arsenide Using a Peroxide-Alkaline Solution
5. Like‐sign asymmetric dislocations in zinc‐blende structure
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1. Tiny Gallium arsenide probe for electro-optic sampling;SPIE Proceedings;2002-09-19
2. C-V Profiling of GaAs Using Electrolyte Barriers;Crystal Research and Technology;2001-10
3. Pulsed anodic etching of III-V semiconductors for carrier concentration profiling;Semiconductor Science and Technology;1992-05-01
4. Photo-electrochemical development of dislocations in n-GaAs;Acta Physica Hungarica;1991-08
5. Observation of dislocations in GaAs by (photo)-electrochemical method;Vacuum;1990-01
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