Amorphisation during elevated temperature implantation
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference28 articles.
1. Ion Implantation of Semiconductors;Carter,1976
2. Radiation Effects in Semiconductors;Swanson,1971
3. Crystalline to amorphous transformation in ion‐implanted silicon: a composite model
4. Defects production and annealing in self‐implanted Si
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1. Amorphous zone evolution in Si during elevated temperature ion bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-03
2. The Avrami-Johnson-Mehl model, heterogeneous nucleation and ion-irradiation-induced phase changes;Philosophical Magazine A;1999-11
3. Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications;Journal of Electronic Materials;1998-05
4. A phenomenological model of the fluence, flux and temperature dependence of amorphisation in heavy ion implanted semiconductors;Radiation Effects and Defects in Solids;1997-08
5. Defect accumulation during room temperature N+ irradiation of silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
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