Low-temperature formation of β-silicon carbide-Reference-Cited by-同舟云学术

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Low-temperature formation of β-silicon carbide

Published:1997-04 Issue:5-7 Volume:6 Page:645-648
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Ulrich S.,Theel T.,Schwan J.,Batori V.,Scheib M.,Ehrhardt H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Formation of epitaxial diamond-silicon carbide heterojunctions

2. β-SiC MESFET's and buried-gate JFET's

3. Temperature dependence of the current‐voltage characteristics of metal‐semiconductor field‐effect transistors inn‐type β‐SiC grown via chemical vapor deposition

4. Growth and application of cubic SiC

5. beta -SiC/Si heterojunction bipolar transistors with high current gain

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