Author:
Peppermüller C.,Schöner Adolf,Rottner Kurt,Helbig R.
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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1. Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements;Materials Science Forum;2004-06
2. Low-Frequency Vibrational Spectroscopy in SiC Polytypes;Materials Science Forum;2001-01
3. Determination of hydrogen in 6H–SiC epitaxial layers by the 15N nuclear reaction analysis technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07
4. silicon carbide (SiC), optical properties of impurities and other defects: hydrogen;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
5. silicon carbide (SiC), optical properties of impurities and other defects: acceptors Al, Ga, B and Be;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.