silicon carbide (SiC), optical properties of impurities and other defects: hydrogen-Reference-Cited by-同舟云学术

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silicon carbide (SiC), optical properties of impurities and other defects: hydrogen

Published: Issue: Volume: Page:1-7
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Container-title:Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
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Springer-Verlag

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http://link.springer.com/content/pdf/10.1007/10860305_14.pdf

Reference16 articles.

1. Choyke, W.J., Patrick, L.: Phys. Rev. Lett. 29 (1972) 355.

2. Patrick, L., Choyke, W.J.: Phys. Rev. B 8 (1973) 1660.

3. Choyke, W.J., Patrick, L.: Phys. Rev. B 9 (1974) 3214.

4. Choyke, W.J., Patrick, L., Dean, P.J.: Phys. Rev. B 10 (1974) 2554.

5. Choyke, W.J., Patrick, L., in: Proc. Eleventh Int. Conf. Phys. Semicond., Warsaw: PWN-Polish Scientific Publishers, 1972, p. 177.

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