Elastic properties of Al Ga1−As Sb1− lattice matched to different substrates
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference24 articles.
1. Electronic and structural properties of the pentanary alloy GaxIn1−xPySbzAs1−y−z
2. Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4‐μm optoelectronic device applications
3. Band parameters for III–V compound semiconductors and their alloys
4. Electronic Properties of AlxGa1?xAsySb1?y Alloys Lattice-Matched to InAs
5. Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures
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1. Pressure-dependent mechanical properties, optical phonon frequencies, and acoustic velocity of the gallium arsenide semiconductor;Optical and Quantum Electronics;2023-05-23
2. Mechanical properties of AlPxSb1-x semiconductor alloys under the effect of temperature and pressure;Computational Condensed Matter;2018-09
3. Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells;Applied Surface Science;2017-02
4. Effects of substrate and compositional disorder upon optical and lattice vibration properties of quaternary semiconductor GaxIn1−xAsyP1−y;Infrared Physics & Technology;2014-03
5. First-principles study on stability, energy gaps, optical phonon and related parameters of In1−x−yAlxGayAs alloys;Journal of Solid State Chemistry;2012-08
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