Pressure-dependent mechanical properties, optical phonon frequencies, and acoustic velocity of the gallium arsenide semiconductor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s11082-023-04931-5.pdf
Reference34 articles.
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3. Bouarissa, N., Bachiri, R.: Elastic properties of AlxGa1− xAsySb1− y lattice matched to different substrates. Mater. Chem. Phys. 78, 271–277 (2003)
4. Boucenna, M., Bouarissa, N.: Effects of hydrostatic pressure and temperature on electronic band parameters in Al x Ga1− xAs. Czechoslov. J. Phys. 55, 65–72 (2005)
5. Cocco, M., Rice, J.R.: Pore pressure and poroelasticity effects in Coulomb stress analysis of earthquake interactions. J. Geophys. Res. Solid Earth. 107, ESE-2 (2002)
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