Sensitivity and hysteresis effect in Al2O3 gate pH-ISFET
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference19 articles.
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3. The temperature dependence of the surface potential at the Al2O3/electrolyte interface;van den Vlekkert;J. Colloid Interface Sci.,1988
4. Comparison of the hysteresis of Ta2O5 and Si3N4 pH-sensing insulators;Bousse;Sens. Actuators B,1994
5. Ion-sensing devices with silicon nitride and borosilicate glass insulators;Harame;IEEE Trans. Electron Devices,1987
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