Secondary defects in low-energy As- and BF2-implanted Si
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Defects in Si II;Tamura,1991
2. Implantation and transient B diffusion in Si: The source of the interstitials
3. Lattice Defects in High-Dose As Implantation into Localized Si Area
4. Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon
5. Characterization and removal of residual defects in high dose, very low energy BF2+-implanted (001) Si
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1. Effect of implantation energy and dose on low-dose SIMOX structures;Applied Physics A;2005-11
2. Shallow BF2 implants in Xe-bombardment-preamorphized Si: The interaction between Xe and F;Applied Physics Letters;2005-04-11
3. Studies of ultra shallow n+–p junctions formed by low-energy As-implantation;Materials Science and Engineering: B;2004-12
4. The interaction between Xe and F in Si (100) pre-amorphised with 20keV Xe and implanted with low energy BF2;Materials Science and Engineering: B;2004-12
5. Influence of Annealing Sequence on p[sup +]/n Junction Images Studied by Scanning Capacitance Microscopy;Electrochemical and Solid-State Letters;2004
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