Self-interstitials generated on silicon bulk surface-Reference-Cited by-同舟云学术

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Self-interstitials generated on silicon bulk surface

Published:2011-02 Issue:1 Volume:21 Page:17-20
ISSN:1002-0071
Container-title:Progress in Natural Science: Materials International
language:en
Short-container-title:Progress in Natural Science: Materials International

Author:

KATO Yukihiro,FUKUDA Ryoji,TAKENO Yuta,SHIMOZAKI Toshitada,OKINO Takahisa

Publisher

Elsevier BV

Subject

General Materials Science

Reference19 articles.

1. Anomalous temperature effect of oxidation stacking faults in silicon [J];HU;Appl Phys Lett,1975

2. Oxidation-induced stacking faults in silicon [J];RAVI;J Appl Phys,1974

3. Retardation of Sb diffusion in Si during thermal oxidation [J];MIZUO;Jpn J Appl Phys,1981

4. Oxidation-rate dependence of phosphorus diffusivity in silicon

5. General relationship for the thermal oxidation of silicon [J];DEAL;J Appl Phys,1965

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