Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature-Reference-Cited by-同舟云学术

Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature

Published:2013-08 Issue:8 Volume:48 Page:2933-2939
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Shah S.,Ghosh K.,Jejurikar S.,Mishra A.,Chakrabarti S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. High-gain quantum-dot semiconductor optical amplifier for 1300 nm

2. Self-assembled semiconductor quantum dots

3. Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

4. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors

5. Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs

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