Novel Ag-Cu foam sheet with multi-layer composite structure for high performance joining of SiC power chips-Reference-Cited by-同舟云学术

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Novel Ag-Cu foam sheet with multi-layer composite structure for high performance joining of SiC power chips

Published:2024-03 Issue: Volume:209 Page:113696
ISSN:1044-5803
Container-title:Materials Characterization
language:en
Short-container-title:Materials Characterization

Author:

Yin Changhao,Wumaeraili Kuxitaer,Zhang Yu,Wu Yongchao,Zhang Jiahe,Guo Wei,Zhu Ying,Song Xiaoguo,Jia Qiang,Zhang Hongqiang

Funder

Beijing Municipal Commission of Education

Harbin Institute of Technology

State Key Laboratory of Advanced Welding and Joining

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference41 articles.

1. Processing and characterization of Nanosilver pastes for die-attaching SiC devices;Bai;IEEE Trans. Electron. Packag. Manuf.,2007

2. Copper nanoparticles of well-controlled size and shape: a new advance in synthesis and self-organization;Ben Aissa;Nanoscale,2015

3. Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits;Flandre;Mater. Sci. Eng. B,1995

4. State of the art of high temperature power electronics;Buttay;Mater. Sci. Eng. B,2011

5. Trends in automotive power semiconductor packaging;Dietrich;Microelectron. Reliab.,2013

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1. Exploring joining techniques for diamond chips on metallized substrates: Micro- and nano-scale mechanical testing approach;Next Materials;2025-04

2. Low-temperature copper sinter-joining technology for power electronics packaging: A review;Journal of Materials Processing Technology;2024-11

3. Exploring the process-microstructure-thermal properties relationship of resin-reinforced Ag sintering material for high-power applications via 3D FIB-SEM nanotomography;Materials & Design;2024-08

4. Development of Ag@Si composite sinter joining with ultra-high resistance to thermal shock test for SiC power device: Experiment validation and numerical simulation;Composites Part B: Engineering;2024-07

5. Review on Power Cycling Reliability of SiC Power Device;Electronic Materials;2024-06-10

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