Growth of polycrystalline gallium oxide films in stagnant oxygen stream ambient-Reference-Cited by-同舟云学术

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Growth of polycrystalline gallium oxide films in stagnant oxygen stream ambient

Published:2022-01 Issue: Volume:16 Page:139-151
ISSN:2238-7854
Container-title:Journal of Materials Research and Technology
language:en
Short-container-title:Journal of Materials Research and Technology

Author:

Megat Abdul Hedei Puteri Haslinda,Hassan Zainuriah,Quah Hock Jin

Funder

Ministry of Higher Education, Malaysia

Publisher

Elsevier BV

Subject

Metals and Alloys,Surfaces, Coatings and Films,Biomaterials,Ceramics and Composites

Reference71 articles.

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2. Comprehensive study of rapid, low-cost silicon surface passivation technologies;Rohatgi;IEEE Trans Electron Dev,2000

3. Influence of annealing atmosphere on the characteristics of Ga2O3/4H-SiC n-n heterojunction diodes;Lee;Materials,2020

4. Effect of deposition pressure on the structural and optical properties of Ga2O3 films obtained by thermal post-crystallization;Liao;CrystEngComm,2018

5. Investigation of opto-dielectric properties of Ti-doped Ga2O3 thin films;Dakhel;Solid State Sci,2013

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1. High-performance a-Ga2O3 solar-blind photodetectors by pulsed magnetron sputtering deposition;Journal of Vacuum Science & Technology A;2024-03-14

2. Theoretical approach to defect-induced magnetism in oxygen-deficient γ-Ga2O3 films;Materials Chemistry and Physics;2024-02

3. Structural, morphological, and metal-oxide-semiconductor characteristics of thulium oxide passivation layer grown in nitrogen-oxygen-nitrogen ambient;Sustainable Materials and Technologies;2023-04

4. Theoretical Approach to Defect-Induced Magnetism in Oxygen-Deficient Γ-Ga2o3 Films;2023

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