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Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

  • Published:1999-01 Issue:1 Volume:43 Page:123-129
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Chiang T.K.,Wang Y.H.,Houng M.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Device characteristics of the select transistor in a vertical-NAND flash memory;Japanese Journal of Applied Physics;2023-02-01

2. Analysis of Surface Potential using 2D-Poisson’s Equation;SSRN Electronic Journal;2022

3. Analytical modeling and simulation of a fully depleted three-gate silicon MESFET on SOI material;Journal of Computational Electronics;2019-01-09

4. Modeling of Classical SOI MESFET;Device Physics, Modeling, Technology, and Analysis for Silicon MESFET;2018-12-14

5. General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET);Device Physics, Modeling, Technology, and Analysis for Silicon MESFET;2018-12-14
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