Fabrication and performances of delta-doped Si n-MESFET grown by MBE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19930450?crawler=true&mimetype=application/pdf
Reference8 articles.
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A novel SOI MESFET by reducing the electric field crowding for high voltage applications;Superlattices and Microstructures;2014-08
2. Analytical model for deriving the threshold voltage of a short gate SOI MESFET with vertically non-uniformly doped silicon film;IET Circuits, Devices & Systems;2010
3. A New 2-D Model for the Potential Distribution and Threshold Voltage of Fully Depleted Short-Channel Si-SOI MESFETs;IEEE Transactions on Electron Devices;2004-02
4. SiGe heterostructure field-effect transistor using V-shaped confining potential well;IEEE Electron Device Letters;2003-02
5. InGaP/GaAs camel-gate field effect transistor with double δ-doping channel profiles;Materials Chemistry and Physics;2002-01
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