Analytical model for deriving the threshold voltage of a short gate SOI MESFET with vertically non-uniformly doped silicon film
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2009.0307?crawler=true&mimetype=application/pdf
Reference17 articles.
1. A sub- and near-threshold current model for silicon MESFETs
2. Fabrication and performances of delta-doped Si n-MESFET grown by MBE
3. Device physics and technology of complementary silicon MESFET's for VLSI applications
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET);Device Physics, Modeling, Technology, and Analysis for Silicon MESFET;2018-12-14
2. Invention and Evaluation of Transistors and Integrated Circuits;Device Physics, Modeling, Technology, and Analysis for Silicon MESFET;2018-12-14
3. An Analytical Model for Deriving the 3-D Potentials and the Front and Back Gate Threshold Voltages of a Mesa-Isolated Small Geometry Fully Depleted SOI MOSFET;JSTS:Journal of Semiconductor Technology and Science;2012-12-30
4. Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET;JSTS:Journal of Semiconductor Technology and Science;2011-06-30
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