Author:
Houssa M,Nigam T,Mertens P.W,Heyns M.M
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Characterization of silicon surface microroughness and tunneling transport through ultrathin gate oxide
2. Atomic-Order Planarization of UltrathinSiO2/Si(001)Interfaces
3. Depas M, Crossley A, Vermeire B, Mertens PW, Sofield CJ, Heyns MM. In: Proc. of the 26th IEEE Semicond. Interf Specialists Conference (Charleston, 1995)
4. Effect of silicon substrate microroughness on gate oxide quality
5. Meuris M, Mertens PW, Opdebeeck A, Schmidt HF, Depas M, Vereecke G, Heyns M, Philipossian A. Solid St Technol 1995, July, 109
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