Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures-Reference-Cited by-同舟云学术

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Electrical methods for estimating the correlation length of insulator thickness fluctuations in MIS tunnel structures

Published:2010-12 Issue:5-6 Volume:13 Page:405-410
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tyaginov S.E.,Vexler M.I.,El Hdiy A.,Gacem K.,Zaporojtchenko V.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. International technology roadmap for semiconductors (ITRS); 2007. Available at: 〈http://www.itrs.net〉.

2. Petru A. Analysis of fluctuations in semiconductor devices. PhD dissertation. USA: University of Maryland; 2004.

3. Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations

4. Current model considering oxide thickness non-uniformity in a MOS tunnel structure

5. Effect of extreme surface roughness on the electrical characteristics of ultra-thin gate oxides

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