Analysis of carrier mobility and concentration in Si-doped GaN grown by reactive molecular beam epitaxy-Reference-Cited by-同舟云学术

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Analysis of carrier mobility and concentration in Si-doped GaN grown by reactive molecular beam epitaxy

Published:1998-05 Issue:5 Volume:42 Page:839-847
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Tang H.,Kim W.,Botchkarev A.,Popovici G.,Hamdani F.,Morkoç H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

2. Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K

3. AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)

4. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

5. Measured microwave power performance of AlGaN/GaN MODFET

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1. Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films;Physica Scripta;2024-01-25

2. Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse;Applied Physics Letters;2024-01-01

3. Comparative study of electrical properties of semi-insulating GaN substrates grown by hydride vapor phase epitaxy and doped with Fe, C, or Mn;Journal of Applied Physics;2023-02-06

4. Boosting the Efficiency of CZTS/Si Tandem Solar Cells Using In 2 O 3 Layer in CZTS Top Cell;Advanced Theory and Simulations;2021-07-03

5. Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping;Applied Physics Letters;2020-04-20

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