An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures-Reference-Cited by-同舟云学术

An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

Published:1999-06 Issue:6 Volume:43 Page:1045-1049
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Len Vee S.C,Hurley R.E,McCusker N,McNeill D.W,Armstrong B.M,Gamble H.S

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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3. Diffusion of metals in silicon dioxide;McBrayer;J. Electrochem. Soc.,1986

4. Copper transport in thermal SiO2;Shacham-Diamand;J. Electrochem. Soc.,1993

5. Dielectric degradation of Cu/SiO2/Si structure during thermal annealing;Chiou;J. Electrochem. Soc.,1996

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