In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures-Reference-Cited by-同舟云学术

In Situ XPS Chemical Analysis of MnSiO3 Copper Diffusion Barrier Layer Formation and Simultaneous Fabrication of Metal Oxide Semiconductor Electrical Test MOS Structures

Published:2016-01-25 Issue:4 Volume:8 Page:2470-2477
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Byrne Conor¹,Brennan Barry²,McCoy Anthony P.¹,Bogan Justin¹,Brady Anita¹,Hughes Greg¹

Affiliation:

1. School of Physical Sciences, Dublin City University, Dublin 9, Ireland

2. National Physical Laboratory, Hampton Road, Teddington TW11 0LW, United Kingdom

Funder

Science Foundation Ireland

Irish Research Council

Intel Corporation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b08044

Reference27 articles.

1. International Technology Roadmap for Semiconductors.www.itrs.net, 2013.

2. Full copper wiring in a sub-0.25 μm CMOS ULSI technology

3. Reliability challenges for copper interconnects

4. Copper Transport in Thermal SiO2

5. Diffusion of Metals in Silicon Dioxide

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