Indium tin oxide ohmic contact to highly doped n-GaN-Reference-Cited by-同舟云学术

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Indium tin oxide ohmic contact to highly doped n-GaN

Published:1999-11 Issue:11 Volume:43 Page:2081-2084
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sheu J.K.,Su Y.K.,Chi G.C.,Jou M.J.,Liu C.C.,Chang C.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

3. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate;ECS Journal of Solid State Science and Technology;2022-11-01

2. Selective Ohmic Contact Formation on Schottky Type AlGaN/GaN UV Sensors Using Local Breakdown;IEEE Sensors Journal;2019-04-15

3. Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes;Superlattices and Microstructures;2017-11

4. Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN;Applied Sciences;2016-02-22

5. Multilayer graphene/ITO transparent n-electrodes for high-efficiency III-nitride light-emitting diodes;physica status solidi (a);2015-12-16

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