Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN-Reference-Cited by-同舟云学术

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Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN

Published:2016-02-22 Issue:2 Volume:6 Page:60
ISSN:2076-3417
Container-title:Applied Sciences
language:en
Short-container-title:Applied Sciences

Author:

Hsiao Wei-Hua,Chen Tai-Hong,Lai Li-Wen,Lee Ching-Ting,Li Jyun-Yong,Lin Hong-Jyun,Wu Nan-Jay,Liu Day-Shan

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Link

http://www.mdpi.com/2076-3417/6/2/60/pdf

Reference20 articles.

1. Transparent cosputtered ITO–ZnO electrode ohmic contact to n-type ZnO for ZnO/GaN heterojunction light-emitting diode

2. Copper aluminum nano junction normal temperature processes and methods applied to LED high heat transfer performance;Wang;Smart Sci.,2014

3. Stability of Ti/Al/ZrB 2 /Ti/Au ohmic contacts on n-GaN

4. Investigation of Ti/Au and Ti2N/Ti/Au ohmic contacts to n-GaN films

5. Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes

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1. Slow Electron Making More Efficient Radiation Emission;Scientific Reports;2018-03-20

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