Author:
Grahn J.V,Fosshaug H,Jargelius M,Jönsson P,Linder M,Malm B.G,Mohadjeri B,Pejnefors J,Radamson H.H,Sandén M,Wang Y.-B,Landgren G,Östling M
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
2. Burghartz JN, Sedgwick TO, Grützmacher DA, Nguyen-Ngoc D, Jenkins KA. Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 1993. p. 55
3. High speed SiGe heterobipolar transistors
4. Parasitic energy barriers in SiGe HBTs
5. Schüppen A, König U, Gruhle A, Kibbel H, Erben U, Hill C, Ashburn P, editors. Proceedings of 24th European Solid State Device Research Conference (ESSDERC), 1994. p. 469
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