Fabrication and electrical characterization of InP-based insulated gate power HEMTS using ultrathin Si interface control layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
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3. Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces
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1. Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4×6) Reconstruction;Japanese Journal of Applied Physics;2002-04-30
2. Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer;Japanese Journal of Applied Physics;2002-02-28
3. MICROSCOPIC UNDERSTANDING AND CONTROL OF SURFACES AND INTERFACES OF COMPOUND SEMICONDUCTORS FOR MESOSCOPIC DEVICES;Surface Review and Letters;2000-10
4. Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation;Applied Surface Science;2000-06
5. MBE growth and applications of silicon interface control layers;Thin Solid Films;2000-05
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