1. Voltage-dependent voltage acceleration of oxide breakdown for ultra-thin oxides;Wu,2000
2. Breakdown measurements of ultra-thin SiO2 at low voltage;Stathis,2000
3. Semiconductor science technology, gate oxide reliability projection to the sub-2 nm regime;Weir;Semicond. Sci. Technol.,2000
4. Field acceleration for oxide breakdown—Can an accurate anode hole injection model resolve the E vs. 1/E controversy?;Alam,2000
5. A new quantitative hydrogen-based model for ultra-thin oxide breakdown;Suñé,2001