1. A. Strong, E. Wu, R. Vollertsen, et al., IEEE Press Ser. Microelectron. Syst., 209 (2009).
2. M. White and J. Bernstein, JPL Publ. No. 08-5 2/08 (JET Propuls. Labor., California Inst. Technol., Pasadena, CA, 2008).
3. B. Wu, Time Dependent Breakdown of Gate Oxide and Prediction of Oxide Gate Lifetime (San Francisco State Univ., San Francisco, 2012).
4. J. McPherson, J. Kim, A. Shanware, and H. C. Mogul, Appl. Phys. Lett. 82, 2121 (2003).
5. J. P. Borja, J. L. Plawsky, and T. Lu, Dielectric Breakdown in Gigascale Electronics: Time Dependent Failure Mechanisms, Springer Briefs in Materials (Springer Int., Switzerland, 2016), p. 11.