Temperature behavior of the GaNP band gap energy-Reference-Cited by-同舟云学术

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Temperature behavior of the GaNP band gap energy

Published:2003-03 Issue:3 Volume:47 Page:493-496
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Rudko G.Yu.,Buyanova I.A.,Chen W.M.,Xin H.P.,Tu C.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen content;Baillargeon;Appl. Phys. Lett.,1992

2. Metalorganic vapor phase epitaxy of GaP1−xNx alloys on GaP;Miyoshi;Appl. Phys. Lett.,1993

3. Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys;Bellaiche;Phys. Rev. B,1997

4. Nature of the fundamental band gap in GaNxP1−x alloys;Shan;Appl. Phys. Lett.,2000

5. Effects of nitrogen on the band structure of the GaNxP1−x alloys;Xin;Appl. Phys. Lett.,2000

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1. A study of the physical properties of GaN, GaP and their mixed ternary alloys for the applications in optoelectronics devices;Bulletin of Materials Science;2023-03-28

2. Structural and optical characterization of dilute phosphide planar heterostructures with high nitrogen content on silicon;CrystEngComm;2020

3. GaP/GaNP Heterojunctions for Efficient Solar‐Driven Water Oxidation;Small;2017-03-31

4. Enhanced conversion efficiency in wide-bandgap GaNP solar cells;Applied Physics Letters;2015-10-12

5. A pressure dependence model for the band gap energy of the dilute nitride GaNP;Journal of Applied Physics;2014-08-14

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