Author:
Levinshtein Michael E.,Ivanov Pavel A.,Mnatsakanov Tigran T.,Yurkov Sergey N.,Agarwal Anant K.,Palmour John W.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Agarwal AK, Ryu SH, Singh R, Palmour JW. 2600 V, 12 A, 4H-SiC, asymmetrical gate turn-off (GTO) thyristor development. In: Carter CH, Devaty RP, Rohrer GS, editors. Silicon carbide and related materials––1999. Switzerland: Trans Tech Publications Ltd; 2000. Mater Sci Forum 338–342;2000:1387–90
2. 4H-SiC p–n diodes and gate turn-off thyristors for high-power, high-temperature applications;Agarwal;Solid-State Electron.,2000
3. Turn-off performance of a 2.6 kV 4H-SiC asymmetrical GTO thyristor;Agarwal;Semicond. Sci. Technol.,2001
4. Frequency properties of 4H-SiC thyristors at high current density;Levinshtein;Semicond. Sci. Technol.,1999
5. Turn-off operation of a MOS-gate 2.6 kV 4H-SiC GTO thyristor;Ivanov;Solid-State Electron.,2000
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