dV/dt effect in high-voltage (1.5kV) 4H–SiC thyristors-Reference-Cited by-同舟云学术

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dV/dt effect in high-voltage (1.5kV) 4H–SiC thyristors

Published:2005-12 Issue:12 Volume:49 Page:2011-2015
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Yurkov Sergey N.,Mnatsakanov Tigran T.,Levinshtein Michael E.,Ivanov Pavel A.,Agarwal Anant K.,Palmour John W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Semiconductor controlled rectifiers;Gentry,1964

2. Thyristor physics;Blicher,1976

3. Thyristoren;Gerlach,1981

4. Propagation of turned-on state in gallium arsenide thyristor;Vainshtein;Sov Phys Semicond,1987

5. Reverse recovery of a GaAs optoelectronic thyristor;Korobov;J Appl Phys,1996

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical Analysis of the Effect of dU/dt in 4H–SiC Thyristor Structures;Technical Physics;2018-10

2. SiC-based electronics (100th anniversary of the Ioffe Institute);Uspekhi Fizicheskih Nauk;2018-10

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