Author:
Baik K.H.,Irokawa Y.,Ren F.,Pearton S.J.,Park S.S.,Park Y.J.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
17 articles.
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1. Effects of Drain Field Plate Structure and Passivation Dielectrics on Breakdown Voltage of GaN MISHEMT;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27
2. The dawn of Ga2O3 HEMTs for high power electronics - A review;Materials Science in Semiconductor Processing;2020-11
3. GaN-Based Schottky Diode;Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications;2018-09-12
4. A review of Ga2O3materials, processing, and devices;Applied Physics Reviews;2018-03
5. Investigation of the GaN-on-GaAs interface for vertical power device applications;Journal of Applied Physics;2014-07-07