1. Wang Y. Fabrication and characterization of gallium nitride based diodes [Ph.D dissertation]. Auburn University; 2011
2. Zhang A. Gallium nitride-based electronic devices [Ph.D dissertation]. In: University of Florida. 2001
3. Zhou Y. Bulk gallium nitride based electronic devices: Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors [Ph.D dissertation]. In: Auburn University. 2007
4. Kaminski N, Hilt O. SiC and GaN Devices–Competition or Coexistence?, 2012 7th International Conference on Integrated Power Electronics Systems. Nuremberg: CIPS; 2012. pp. 1-11
5. Hacke P, Detchprohm T, Hiramatsu K, Sawaki N. Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy. Applied Physics Letters. 1993;63:2676. DOI: 10.1063/1.110417