Ambipolar Schottky barrier silicon-on-insulator metal–oxide–semiconductor transistors-Reference-Cited by-同舟云学术

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Ambipolar Schottky barrier silicon-on-insulator metal–oxide–semiconductor transistors

Published:2003-02 Issue:2 Volume:47 Page:247-251
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lin Horng-Chih,Wang Meng-Fan,Lu Chia-Yu,Huang Tiao-Yuan

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain

2. Silicon field‐effect transistor based on quantum tunneling

3. Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate

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1. Investigation of Device and Circuit-Level Performances of Dielectric Engineered Dopingless SOI Schottky Barrier MOSFET;Lecture Notes in Electrical Engineering;2023-09-03

2. Investigation of Dual Metal Gate Schottky Barrier MOSFET for Suppression of Ambipolar Current;IETE Journal of Research;2020-09-29

3. Optimisation of electrical parameters in Fe DS-SBTFET and its application as a digital inverter;International Journal of Electronics;2019-04-13

4. Schottky Barrier FET Biosensor for Dual Polarity Detection: A Simulation Study;IEEE Electron Device Letters;2017-11

5. Design and Investigation of Dielectric Engineered Dopant Segregated Schottky Barrier MOSFET With NiSi Source/Drain;IEEE Transactions on Electron Devices;2017-11

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