Silicon field‐effect transistor based on quantum tunneling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112250
Reference5 articles.
1. Nanoelectronics
2. SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain
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5. Current transport in metal semiconductor contacts—a unified approach
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