1. Fully depleted 0.25 μm SOI devices for low power RF mixed analog–digital circuits;Raynaud,1998
2. High frequency performance of a fully depleted 0.25 μm SOI CMOS technology;Rathman,1999
3. RF potential of a 0.18 μm CMOS logic technology;Burghartz;IEEE Trans Electron Devices,2000
4. Scability of fully depleted SOI technology into 0.13 μm 1.2–1 V CMOS generation;Raynaud,1998
5. Silicon-on-insulator technology: material to VLSI;Colinge,1991