New analytical models of subthreshold surface potential and subthreshold current of fully depleted short-channel silicon-on-insulator MOSFETs with halo or pocket implantation-Reference-Cited by-同舟云学术

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New analytical models of subthreshold surface potential and subthreshold current of fully depleted short-channel silicon-on-insulator MOSFETs with halo or pocket implantation

Published:2014-05-01 Issue:6 Volume:53 Page:064301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Han-Pang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/53/i=6/a=064301/pdf

Reference35 articles.

1. Scaling fully depleted SOI CMOS

2. Total dose radiation hard 0.35 /spl mu/m SOI CMOS technology

3. Silicon-on-Insulator Technology

4. Solid state [Semiconductors. 1999 technology analysis and forecast]

5. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's

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