1. Iwai H, Momose HS. Ultra-thin gate oxides – performance and reliability. IEDM'98, 1998
2. Taur Y. The incredible shrinking transistor. IEEE Spectrum 1999;7:25–9
3. Zhang J, Yuan JS, Ma Y, Oates AS. Direct tunneling and surface roughness effects on C–V characteristics of ultrathin gate CMOS, submitted for publication
4. Weir BE, Silverman PJ, Alam MA, Baumann F, Monroe D, Ghetti A, Bude JD, Timp GL, Hamad A, Oberdick TM, Zhao NX, Ma Y, Brown MM, Hwang D, Sorsch TW, Madic J. Gate oxides in 50 nm devices: thickness uniformity improves projected reliability. IEEE IEDM, 1999:437
5. Reactionannealing pathways for forming ultrathin silicon nitride films for composite oxide nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary MOS devices;Lucovsky;J Vac Sci Technol A,1999