Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing-Reference-Cited by-同舟云学术

Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing

Published:2014-12 Issue: Volume:630 Page:273-279
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Kaufman-Osborn Tobin,Chagarov Evgueni A.,Park Sang Wook,Sahu Bhagawan,Siddiqui Shariq,Kummel Andrew C.

Funder

Semiconductor Research Corporation

Applied Materials

Global Foundries

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference49 articles.

1. (Invited) Past, Present and Future: SiGe and CMOS Transistor Scaling

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