DX centers in Si-doped InxAl1−xAs (0.3⩽x⩽0.5)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
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3. InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: influence of indium content on material properties and device performance;Cordier;Jpn J Appl Phys,1999
4. On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistors;Kastalsky;IEEE Trans Electron Devices,1986
5. Enhanced multiphonon capture of hot electrons by deep centers with strong lattice coupling: A Monte Carlo study of InP:Fe;Isler;Phys Rev B,2000
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1. A Universal Model for DX‐Center Binding Energy in Cubic III–V Compounds;physica status solidi (b);2021-01-29
2. Energy level of the Si-related DX-center in (AlyGa1−y)1−xInxAs;Applied Physics Letters;2015-03-09
3. Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations;Semiconductors;2013-07
4. Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties;Semiconductors;2011-09
5. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates;Crystallography Reports;2011-09
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