Planar 4H- and 6H-SiC p–n diodes fabricated by selective diffusion of boron

Author:

Gao Y,Soloviev S,Sudarshan T.S

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. SiC power devices;Agarwal;Naval Res Rev,1999

2. Planar aluminum-implanted 1400 V 4H silicon carbide p–n diodes with low on resistance;Peters;Appl Phys Lett,1997

3. P–N Junction creation in 6H-SiC by aluminum implantation;Ottaviani;Mater Sci Engng B,1999

4. The Third European Conference on SiC and Related Materials;Bakowski;Compound Semicond,2000

5. Doping of 6H-SiC by selective diffusion of boron;Soloviev;Appl Phys Lett,2000

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