Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs-Reference-Cited by-同舟云学术

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Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs

Published:2001-09 Issue:9 Volume:45 Page:1683-1686
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee J.W.,Jeon M.H.,Devre M.,Mackenzie K.D.,Johnson D.,Sasserath J.N.,Pearton S.J.,Ren F.,Shul R.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Sze SM, editor. High-Speed Semiconductor Devices. NY: Wiley; 1990

2. A Highly Selective, Chlorofluorocarbon‐Free GaAs on AlGaAs Etch

3. Selective Dry Etching of AlGaAs-GaAs Heterojunction

4. Salimian S, Cooper CB III, Norton R, Bacon J. Appl Phys Lett 1987;1:2225

5. Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and He

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