Ba1−xSrxTiO3 thin films by polymeric precursor method-Reference-Cited by-同舟云学术

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Ba1−xSrxTiO3 thin films by polymeric precursor method

Published:2000-05 Issue:5-6 Volume:43 Page:249-253
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Pontes F.M,Longo E,Rangel J.H,Bernardi M.I,Leite E.R,Varela J.A

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Leakage and interface engineering in titanate thin films for non-volatile ferroelectric memory and ulsi drams

2. Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors

3. Dielectric Properties of(BaxSr1-x)TiO3Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application

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