Leakage and interface engineering in titanate thin films for non-volatile ferroelectric memory and ulsi drams-Reference-Cited by-同舟云学术

Leakage and interface engineering in titanate thin films for non-volatile ferroelectric memory and ulsi drams

Published:1995-02 Issue:1-4 Volume:7 Page:291-306
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Chen X.¹,Kingon A. I.¹,Al-Shareef H. N.¹,Bellur K. R.¹,Gifford K.¹,Auciello O.¹²

Affiliation:

1. a Department of Materials Science and Engineering , North Carolina State University , Raleigh, NC, 27695–7907, U.S.A.

2. b Electronics Technology Division , MCNC , Research Triangle Park, NC, 27709

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589508220240

Reference13 articles.

1. Sudhama , C. Kim , J. Chikarmane , V. Lee , J. C. Tarch , A. F. Myers , E. R. and Novak , S. Ferroelectric Thin Films, proceedings of MRS meeting Edited by: Kingon , A. I. Myers , E. R. and Tuttle , B. Vol. 243, 147 191

2. Bellur , K. R. Al-Shareef , H. N. Auciello , O. and Kingon , A. I. the Proceedings of ISAF′92. pp.448 And also

3. Processing-structure relations for ferroelectric thin films deposited by ion beam sputter deposition

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