Improvement of Sol–Gel Derived PbZrxTi1-xO3Film Properties Using Thermal Press Treatment-Reference-Cited by-同舟云学术

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Improvement of Sol–Gel Derived PbZrxTi1-xO3Film Properties Using Thermal Press Treatment

Published:2010-09-21 Issue:9 Volume:49 Page:09MA08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kaneda Toshihiko,Kim Joo-Nam,Tokumitsu Eisuke,Shimoda Tatsuya

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. DC leakage and failure of PZT thin film capacitors for non-volatile ferroelectric memory and dram applications

2. Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories

3. Characterization of Lead-Zirconate-Titanate (PZT) Films Formed by Photo-Decomposition of Metal Organic Polymer

4. Ferroelectric Properties of Crystalline-Oriented Lead-Zirconate-Titanates Formed by Sol-Gel Deposition Technique

5. Electrical characteristics of (100), (111), and randomly aligned lead zirconate titanate thin films

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced electrical properties in bilayered ferroelectric thin films;Science China Physics, Mechanics and Astronomy;2013-02-13

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