Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors-Reference-Cited by-同舟云学术

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Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors

Published:1975 Issue: Volume: Page:195-265
ISSN:0065-2539
Container-title:Advances in Electronics and Electron Physics
language:
Short-container-title:

Author:

Pucel Robert A.,Haus Hermann A.,Statz Hermann

Publisher

Elsevier

Reference71 articles.

1. Effect of source lead inductance on the noise figure of a GaAs FET

2. Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies

3. Noise behavior of GaAs field-effect transistors with short gate lengths

4. Si and GaAs 0.5μm-gate Schottky-barrier field-effect transistors

5. G. E. Brehm, Proc. Bien. Cornell Elec. Eng. Conf, 4th, 1973 pp. 77–85 (1973).

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