Funder
National Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process;Mei;IEEE Electron Devices Letters,2015
2. THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors;Deal;IEEE Trans Terahertz Sci Technol,2011
3. Weber R, Massler H, Leuther A. “D-band Low-noise Amplifier MMIC with 50 % Bandwidth and 3.0 dB Noise Figure in 100 nm and 50nm mHEMT Technology,”2017 IEEE MTT-S International Microwave Symposium, pp. 756-759, 2017, 10.1109/MWSYM.2017.8058686.
4. Gate Noise in Field Effect Transistors at Moderately High Frequencies;Ziel;Proc IEEE,1963
5. Signal and noise properties of gallium arsenide microwave field effect transistors;Pucel;Advances in Electronics and Electron Physics,1975
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