Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory-Reference-Cited by-同舟云学术

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Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory

Published:2014-06 Issue: Volume:125 Page:143-146
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Ding Keyuan,Ren Kun,Rao Feng,Song Zhitang,Wu Liangcai,Liu Bo,Feng Songlin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Phase Change Materials and Their Application to Nonvolatile Memories

2. Thin Films of Ge–Sb–Te-Based Phase Change Materials: Microstructure and in Situ Transformation

3. Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory

4. Study on the thermal stability improvement of GeTe by Al doping

5. Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application

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1. Phase-change heterostructure with HfTe2 confinement sublayers for enhanced thermal efficiency and low-power operation through Joule heating localization;Journal of Materials Science & Technology;2025-01

2. Effect of Bi addition on the switching effect and structure of thin Ge2Sb2Te5 films prepared by ion-plasma RF co-sputtering;Journal of Non-Crystalline Solids;2024-10

3. Crystallization behavior and structural characteristics of Cr-doped Sb70Se30 thin films for phase change memory;Ceramics International;2024-09

4. Optically Inducing and Probing the Local Crystallization of Ultra-Thin Gesbte Films by Single-Pulse Laser Irradiations;2024

5. Tunable metasurfaces enabled by phase-change materials;Semiconductors and Semimetals;2024

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