Effect of Bi addition on the switching effect and structure of thin Ge2Sb2Te5 films prepared by ion-plasma RF co-sputtering-Reference-Cited by-同舟云学术

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Effect of Bi addition on the switching effect and structure of thin Ge2Sb2Te5 films prepared by ion-plasma RF co-sputtering

Published:2024-10 Issue: Volume:642 Page:123167
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Tolepov Zhandos,Prikhodko Oleg,Kolobov Alexander,Ismailova Guzal,Peshaya Svetlana,Guseinov Nazim,Mukhametkarimov Yerzhan,Kapanov Alimzhan,Maksimova Suyumbika

Funder

Ministry of Science and Higher Education of the Republic of Kazakhstan

Ministry of Education and Science of the Russian Federation

Publisher

Elsevier BV

Reference45 articles.

1. Phase change thin films for non-volatile memory applications;Lotnyk;Nanoscale Adv.,2019

2. Phase-change materials in electronics and photonics;Zhang;MRS Bull.,2019

3. Recent developments in Chalcogenide phase change material-based nanophotonics;Tripathi;Nanotechnology,2023

4. Phase change memory materials and their applications;Kozyukhin;Russian Chem. Rev.,2022

5. Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys;Vinod;Sci. Rep.,2015

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