Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy-Reference-Cited by-同舟云学术

Electronic structure of La2O3/Si interface by in situ photoemission spectroscopy

Published:2017-03 Issue: Volume:191 Page:97-100
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Ablat Abduleziz,Mamat Mamatrishat,Ghupur Yasin,Aimidula Aimierding,Wu Rong,Ali Baqi Muhammad,Gholam Turghunjan,Wang Jiaou,Qian Haijie,Wu Rui,Ibrahim Kurash

Funder

National Natural Science Foundation of China

Xinjiang Uyghur Autonomous Region

Xinjiang Uyghur Autonomous Region of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

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3. Heteroepitaxy of La2O3 and La2–x Yx O3 on GaAs (111) A by atomic layer deposition: achieving low interface trap density;Wang;Nano Lett.,2013

4. X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics;Zhang;AIP Adv.,2014

5. Formation of a stratified lanthanum silicate dielectric by reaction with Si (001);Copel;Appl. Phys. Lett.,2001

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